One-step selective growth of GaAs on V-groove patterned GaAs substrates using CBr4 and CCl4

Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997

Volumn , Issue , 1997, Pages 151-154

  Kim, Eun Kyu ^a   Kim, Tae Geun ^a   Son, Chang Sik ^b   Kim, Seong Il ^a   Park, Y K ^a   Kim, Yong ^a   Min, Suk Ki ^a   Choi, In Hoon ^b  

^a Korea Institute of Science and Technology   (South Korea)

^b Korea University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC PRESSURE; BROMINE COMPOUNDS; CHLORINE COMPOUNDS; EPILAYERS; GALLIUM ARSENIDE; GROWTH RATE; III-V SEMICONDUCTORS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM; SEMICONDUCTOR JUNCTIONS; SUBSTRATES;

ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL VAPOR DEPOSITION; CARBON TETRABROMIDE; EPITAXIAL TECHNOLOGIES; GAAS SUBSTRATES; LATERAL GROWTH RATES; P-N JUNCTION; QUANTUM STRUCTURE; SELECTIVE GROWTH;

VANADIUM COMPOUNDS;

EID: 56249135314     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISCS.1998.711602     Document Type: Conference Paper

References (9)

1. Hersee S D, Barbier E and Blondeau R 1986 J. Cryst. Growth 11310.
2. Kim T G, Kim E K, Min S K and Park J H 1996 Appl. Phys. Lett. 69 955.
3. Lopez M, Tanaka N, Matsuyama I and Ishikawa T 1996 Appl. Phys. Lett. 68 658.
4. Finnie P, Buchanan M, Lacelle C and Roth A P 1996 J. Cryst. Growth 160 220.
5. Kim Y, Park Y K, Kim M S, Kang J M, Kim S I, Hwang S M and Min S K 1995 Appl. Phys. Lett. 67 1871.
6. Kim S I, Kim M S, Kim Y, Son C S, Hwang S M, Min B D, Kim E K and Min S K 1996 Appl. Phys. Lett. 69 815.
7. Son C S, Kim S I, Kim Y, Lee M S, Kim M S, Min S K and Choi IH 1996 J. Cryst. Growth 165 222.
8. Son C S, Kim S I, Kim Y, Park Y K, Kim E K, Min S K and Choi I H 1997 J. Appl. Phys. 82 1205.
9. de Lyon T J, Buchan N I, Kirchner P D, Woodall J M, Scilla G J and Cardone F 1991 Appl. Phys. Lett. 58 517.