Dependence of carbon incorporation on crystallographic orientation of GaAs and AlGaAs grown by metalorganic chemical vapor deposition using CBr4

Journal of Applied Physics

Volumn 82, Issue 3, 1997, Pages 1205-1207

  Son, Chang Sik ^a,b   Kim, Seong Il ^a   Kim, Yong ^a   Park, Young K ^a   Kim, Eun Kyu ^a   Min, Suk Ki ^a   Choi, In Hoon ^b  

^a Korea Institute of Science and Technology   (South Korea)

^b Korea University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0012604546     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366264     Document Type: Article

References (22)

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22. Although these values do not represent actual binding energies for Al-C, Ga-C, and As-C on the epilayer surface during MOCVD growth, the relationship among them can be regarded as the binding energy between C and metals. Since the binding energy of As-C is smaller than that of Al-C and Ga-C, C atoms always preferably occupy As sites in GaAs and AlGaAs systems. The conduction type of C-doped AlGaAs, therefore, remains p type over the whole As mole fraction range, in contrast to the amphoteric nature of the C dopant in InGaAs (Ref. 11).