Microstructural and compositional characteristics of GaN films grown on a ZnO-buffered Si (111) wafer

Micron

Volumn 35, Issue 6, 2004, Pages 475-480

  Luo, X H ^a   Wang, R M ^a   Zhang, X P ^a   Zhang, H Z ^a   Yu, D P ^a   Luo, M C ^b  

^a PEKING UNIVERSITY   (China)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

Electron energy loss spectroscopy; Gallium nitride; Molecular beam epitaxy; Transmission electron microscopy

Indexed keywords

SIO;

EID: 2342480032     PISSN: 09684328     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.micron.2004.01.010     Document Type: Article

References (8)

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