Band gap blue shift of InGaAs/InP multiple quantum wells by different dielectric film coating and annealing

Thin Solid Films

Volumn 498, Issue 1-2, 2006, Pages 179-182

  Zhao, J ^a   Chen, J ^a   Feng, Z C ^b   Chen, J L ^c   Liu, R ^c   Xu, G ^d  

^a TIANJIN NORMAL UNIVERSITY   (China)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^c NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^d MCMASTER UNIVERSITY   (Canada)

Author keywords

Dielectric cap; Impurity free vacancy enhanced intermixing; InGaP; InP; Molecular beam epitaxy; Optical properties; Quantum well; Rapid thermal annealing; SIMS

Indexed keywords

COATINGS; DIELECTRIC FILMS; INDIUM COMPOUNDS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY;

DIELECTRIC CAP; IMPURITY-FREE VACANCY-ENHANCED INTERMIXING; INGAP;

SEMICONDUCTOR QUANTUM WELLS;

EID: 30944469173     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.07.076     Document Type: Conference Paper

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