LP-MOCVD growth of ternary BxGa1-xAs epilayers on (0 0 1)GaAs substrates using TEB, TMGa and AsH3

Microelectronics Journal

Volumn 39, Issue 12, 2008, Pages 1678-1682

  Wang, Qi ^a,b   Ren, Xiaomin ^a   Wang, Feihua ^a   Feng, Jianyou ^a   Lv, Jihe ^a   Zhou, Jing ^a   Cai, Shiwei ^a   Huang, Hui ^a   Huang, Yongqing ^a  

^a BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

^b BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

Author keywords

BGaAs; GaAs; Metalorganic chemical vapor deposition; Triethylboron

Indexed keywords

ARSENIC; BORON; BORON COMPOUNDS; GROWTH TEMPERATURE; METALLIC COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM; VAPORS; ZINC;

BGAAS; BORON COMPOSITIONS; GAAS; GAAS SUBSTRATES; GROWTH CONDITIONS; HIGHER TEMPERATURES; INCORPORATION BEHAVIORS; METALORGANIC CHEMICAL VAPOR DEPOSITION; METALORGANIC CHEMICAL VAPOR DEPOSITIONS; MOCVD GROWTHS; MOLE FRACTIONS; OPTIMUM GROWTH TEMPERATURES; RMS ROUGHNESSES; SURFACE AREAS; TRIETHYLBORON; TRIMETHYL GALLIUMS;

GALLIUM ALLOYS;

EID: 56049092810     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2008.02.017     Document Type: Article

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