Terahertz-emitting devices based on boron-doped silicon

IEEE MTT-S International Microwave Symposium Digest

Volumn 1, Issue , 2004, Pages 361-364

  Troeger, Ralph T ^a   Adam, Thomas N ^a   Ray, Samit K ^a   Lv, Pengcheng ^a   Kim, Sangcheol ^a   Xuan, Guangchi ^a   Ghosh, Suddhasatwa ^a   Kolodzey, James ^a  

^a UNIVERSITY OF DELAWARE   (United States)

Author keywords

Charge carrier processes; Semiconductor impurities; Semiconductor lasers

Indexed keywords

CHARGE CARRIER PROCESSES; LIGHT EMITTERS; SEMICONDUCTOR IMPURITIES; TERAHERTZ-EMITTING DEVICES;

ANISOTROPY; BORON COMPOUNDS; COMPUTER SIMULATION; DATA PROCESSING; ELECTROLUMINESCENCE; ELECTROMAGNETIC WAVE EMISSION; ELECTRON TRANSITIONS; ETCHING; IONS; SEMICONDUCTOR DOPING; SEMICONDUCTOR LASERS; SEMICONDUCTOR MATERIALS; SPECTRUM ANALYSIS;

SILICON;

EID: 4444272198     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (16)

1. a) T. N. Adam is now with IBM, 2070 Route 52, M/S AE-1, Hopewell Junction, NY 12533, USA.
2. b) S. K. Ray is now with the Indian Institute of Technology Kharagpur, Kharagpur - 721302, INDIA
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