Effective channel mobility in epitaxial and implanted 4H-SiC lateral MOSFETs

Materials Research Society Symposium Proceedings

Volumn 1069, Issue , 2008, Pages 257-262

  Haney, Sarah Kay ^a,b   Ryu, Sei Hyung ^a   Dhar, Sarit ^a   Agarwal, Anant ^a   Johnson, Mark ^b  

^a Arkansas Power Electronics International Inc   (United States)

^b North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MOSFET DEVICES; THRESHOLD VOLTAGE;

4H-SIC MOSFETS; DAMAGED AREA; DOPING CONCENTRATION; EFFECTIVE CHANNEL MOBILITIES; EPITAXIAL REGROWTH; LATERAL MOSFETS; MOSFETS; N-CHANNEL;

SILICON CARBIDE;

EID: 55849110765     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-1069-d07-18     Document Type: Conference Paper

References (5)

1. P. Jamet, S. Dimitrijev, Appl. Phys. Lett., vol. 79, no. 3, pp. 323-325, July 2001.
2. G. Y. Chung, C. C. Tin, J. R. Williams, K. McDonald, R. K. Chanana, R. A. Weller, S. T. Pantelides, L. C. Feldman, O. W. Holland, M. K. Das and J. W. Palmour, IEEE Electron Dev. Lett., vol. 22, no. 4, pp. 176-178, April 2001.
3. A. Agarwal, S. Haney, J. Electronic Materials, online, DOI 10.1007/s11664-007-0321-3, Nov 2007.
4. S. Haney, A. Agarwal, J. Electronic Materials, online, DOI 10.1007/s11664-007-0310-6, Nov 2007.
5. R. Schorner, P. Friedrichs, D. Peters, IEEE Trans on Electron Devices., vol 46, no. 3, pp. 533-541, March 1999.