Effect of thallium doping on the electrical and optical properties of CdO thin films

Physica Status Solidi (A) Applications and Materials Science

Volumn 205, Issue 11, 2008, Pages 2704-2710

  Dakhel, A A ^a  

^a UNIVERSITY OF BAHRAIN   (Bahrain)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; BAND TRANSITIONS; BURSTEIN; CDO FILMS; CDO THIN FILMS; CLASSICAL DRUDE THEORIES; CRYSTALLINE STRUCTURES; ELECTRICAL AND OPTICAL PROPERTIES; ELECTRICAL MEASUREMENTS; ENERGY LEVEL SHIFTS; EXPERIMENTAL DATUMS; IMPURITY BANDS; OPTICAL AND ELECTRICAL PROPERTIES; OPTICAL CHARACTERISATION; SEMI-CONDUCTORS; SI WAFERS; STRUCTURAL STUDIES; VACUUM EVAPORATION METHODS; X-RAY DIFFRACTIONS;

ABSORPTION SPECTROSCOPY; BIOACTIVITY; CADMIUM COMPOUNDS; CARRIER CONCENTRATION; CARRIER MOBILITY; CIVIL AVIATION; CONCENTRATION (PROCESS); DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTRIC PROPERTIES; ELECTRON MOBILITY; ENERGY GAP; GALLIUM ALLOYS; OPTICAL MATERIALS; OPTICAL PROPERTIES; SCANDIUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON WAFERS; THALLIUM; THICK FILMS; THIN FILMS; TIN; VACUUM EVAPORATION;

FILM PREPARATION;

EID: 55849097325     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200723472     Document Type: Article

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