Suppression of the internal electric field effects in ZnO/Zn 0.7Mg0.3O quantum wells by ion-implantation induced intermixing

Nanotechnology

Volumn 19, Issue 5, 2008, Pages

  Davis, J A ^a   Dao, L V ^a   Wen, X ^a   Ticknor, C ^a   Hannaford, P ^a   Coleman, V A ^b   Tan, H H ^b   Jagadish, C ^b   Koike, K ^c   Sasa, S ^c   Inoue, M ^c   Yano, M ^c  

^a SWINBURNE UNIVERSITY OF TECHNOLOGY   (Australia)

^b AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^c OSAKA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRIC FIELD EFFECTS; INTERFACES (MATERIALS); ION IMPLANTATION; PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING; ZINC OXIDE;

ELECTRON-HOLE WAVEFUNCTION OVERLAP; EXCITON LIFETIME; OSCILLATOR STRENGTH; STARK SHIFT;

SEMICONDUCTOR QUANTUM WELLS;

MAGNESIUM OXIDE; ZINC OXIDE;

ARTICLE; CHEMICAL STRUCTURE; ELECTRIC CONDUCTIVITY; ELECTRIC FIELD; ELECTRON; PHOTOLUMINESCENCE; PRIORITY JOURNAL; QUANTUM MECHANICS; SEMICONDUCTOR;

EID: 38349000729     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/19/05/055205     Document Type: Article

References (18)

1. Jagadish C and Pearton S J 2006 Zinc Oxide, Bulk, Thin Films and Nanostructures (Oxford: Elsevier)
2. Muth J F, Lee J H, Shmagin I K, Kolbas R M, Casey H C, Keller B P, Mishra U K and DenBaars S P 1997 Appl. Phys. Lett. 71 2572
3. Park S-H and Ahn D 2005 Appl. Phys. Lett. 87 253509
4. Im J S, Kollmer H, Off J, Sohmer A, Scholz F and Hangleiter A 1998 Phys. Rev. B 57 R9435
5. Bernardini F and Fiorentini V 2000 Appl. Surf. Sci. 166 23
6. Yano M, Hashimoto K, Fujimoto K, Koike K, Sasa S, Inoue M, Uetsuji Y, Ohnishi T and Inaba K 2007 J. Cryst. Growth 301/302 353
7. Allen M W, Miller P, Reeves R J and Durbin S M 2007 Appl. Phys. Lett. 90 62104
8. Morhain C et al 2005 Phys. Rev. B 72 241305(R)
9. Lefebvre P, Morel A, Gallart M, Taliercio T, Allegre J, Gil B, Mathieu H, Damilano B, Grandjean N and Massies J 2001 Appl. Phys. Lett. 78 1252
10. Zhang B P, Liu B L, Yu J Z, Wang Q M, Liu C Y, Liu Y C and Segawa Y 2007 Appl. Phys. Lett. 90 132113
11. Wetzel C, Takeuchi T, Amano H and Akasaki I 2000 Phys. Rev. B 61 2159
12. Grandjean N, Damilano B, Dalmasso S, Leroux M, Laugt M and Massies J 1999 J. Appl. Phys. 86 3714
13. Koike K, Takada G, Fujimoto K, Sasa S, Inoue M and Yano M 2006 Physica E 32 191
14. Coleman V A, Buda M, Jagadish C, Phillips M R, Koike K, Sasa S, Inoue M and Yano M 2006 Semicond. Sci. Technol. 21 L25
15. Tan H H, Williams J S, Jagadish C, Burke P T and Gal M 1996 Appl. Phys. Lett. 68 2401
16. Chen C, Hsueh T, Ting Y, Chi G and Chang C 2001 J. Appl. Phys. 90 5180
17. Chen C, Hsieh K, Ting Y, Chi G, Chuo C, Chyi J and Chang C 2001 J. Appl. Phys. 89 5465
18. Christmas U M E, Andreev A D and Faux D A 2005 J. Appl. Phys. 98 73522