Mechanism of hole accumulation at α-NPD/Alq3 interface studied by displacement current measurement

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7051, Issue , 2008, Pages

  Sato, Naoki ^a   Noguchi, Yutaka ^a   Tanaka, Yuya ^a   Nakayama, Yasuo ^a   Ishii, Hisao ^a  

^a CHIBA UNIVERSITY   (Japan)

Author keywords

NPD; Accumulation; Alq 3; Blocking; Displacement current measurement; Interfacial charge

Indexed keywords

ALUMINA; AMINES; LIGHT EMISSION; LIGHT EMITTING DIODES; ORGANIC LIGHT EMITTING DIODES (OLED); TIN; TITANIUM COMPOUNDS;

ACCUMULATION; ALQ 3; BLOCKING; DISPLACEMENT CURRENT MEASUREMENT; INTERFACIAL CHARGE;

ELECTRIC CURRENT MEASUREMENT;

EID: 55549108711     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.795790     Document Type: Conference Paper

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