Breakdown of cation vacancies into anion vacancy-antisite complexes on III-V semiconductor surfaces

Physical Review B - Condensed Matter and Materials Physics

Volumn 78, Issue 15, 2008, Pages

  Hoglund A ^a   Mirbt, S ^a   Castleton, C W M ^a,c   Gothelid M ^b  

^a UPPSALA UNIVERSITY   (Sweden)

^b MAP   (Sweden)

^c NOTTINGHAM TRENT UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 55449098829     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.78.155318     Document Type: Article

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