Optical and electrical properties of polycrystalline GaN films prepared by post-nitridation technique

Physica B: Condensed Matter

Volumn 352, Issue 1-4, 2004, Pages 1-4

  Yang, Yingge ^a   Yu, Ke ^b,c   Zhang, Yafei ^a  

^a Shanghai Jiao Tong University   (China)

^b EAST CHINA NORMAL UNIVERSITY   (China)

^c SHANDONG UNIVERSITY   (China)

Author keywords

GaN thin films; Scanning and transmission electron microscopy; Structural and electronic properties

Indexed keywords

PHOTOLUMINESCENCE; POLYCRYSTALLINE MATERIALS; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

GAN THIN FILMS; HEXAGONAL STRUCTURE; POST-NITRIDATION TECHNIQUE; STRUCTURAL AND ELECTRONIC PROPERTIES;

GALLIUM NITRIDE;

EID: 5544283496     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2004.05.004     Document Type: Article

References (12)

1. Nakamura S., Tietian J. Appl. Phys. Lett. 74:1994;1687.
2. Yang Q.K., Li A.Z., Zhang Y.G., Yang B., Brandt O., Ploog K. J. Cryst. Growth. 192:1998;28.
3. Brandt O., Wuensche H.J., Yang H., Klann R., Muellhaeuser J.R., Ploog K.H. J. Cryst. Growth. 189-190:1998;790.
4. Nakamura S., Senoh M., Nagahama S. J. Appl. Phys. 35:1996;74.
5. Park C.H., Chai D.I. Phys. Rev. B. 55:1997;12995.
6. Yang B., Brandt O., Trampert A., Jenichen B., Ploog K.H. Appl. Surf. Sci. 123:1998;1.
7. Nakada Yoshinobu, Aksenov Lgor, Okumura Hajiime Appl. Phys. Lett. 73:1998;827.
8. Zhang Haoxiang, Ye Zhizhen, Zhao Binghui J. Cryst. Growth. 210:2000;511.
9. Young W.T., Silva S.R.P., Shannon J.M. Diam. Relat. Mater. 10:2001;1311.
10. Bragg W.L. Cryst. State. 1:1946;189.
11. Abe K., Nonomura S., Kobayashi S., Ohkubo M., Gotoh T., Nishio M., Nitta S., Okamoto S., Kanemitsu Y. J. Non-cryst. Solids. 227-230:1998;1096.
12. Vermant T., Kachi T., Kano H., Nagase H., Koide N. K. Manade, J. Appl. Phys. 77:1995;4389.