High operating temperature InAs quantum dot infrared photodetector via selective capping techniques

2008 8th IEEE Conference on Nanotechnology, IEEE-NANO

Volumn , Issue , 2008, Pages 112-115

  Shao, Jiayi ^a   Vandervelde, Thomas E ^a   Jang, Woo Yong ^a   Stintz, Andreas ^a   Krishna, Sanjay ^a  

^a UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPPING MATERIALS; CAPPING TECHNIQUES; GROWTH CONDITIONS; HIGH OPERATING TEMPERATURES; INAS QUANTUM DOTS; INFRARED PHOTO DETECTORS; INGAAS/GAAS; IR PHOTODETECTORS; OPERATING TEMPERATURES; QUANTUM DOTS; QUANTUM WELLS; SPECTRAL RESPONSES;

INDIUM ARSENIDE; INFRARED DETECTORS; NANOTECHNOLOGY; OPTICAL PROPERTIES; OPTICAL WAVEGUIDES; OPTOELECTRONIC DEVICES; PHOTODETECTORS; PROBABILITY DENSITY FUNCTION; QUANTUM ELECTRONICS; SEMICONDUCTING INDIUM; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 55349126772     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NANO.2008.41     Document Type: Conference Paper

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