The effect of two-temperature capping on germanium/silicon quantum dots and analysis of superlattices so composed

Journal of Applied Physics

Volumn 99, Issue 12, 2006, Pages

  Vandervelde, Thomas E ^a   Sun, Kai ^b   Merz, James L ^b   Kubis, Alan ^a   Hull, Robert ^a   Pernell, Timothy L ^a   Bean, John C ^a  

^a University of Virginia   (United States)

^b UNIVERSITY OF NOTRE DAME   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COLD-CAP LAYERS; OPTIMAL GROWTH CONDITIONS; SHAPE RETENTION; TWO-TEMPERATURE CAPPING TECHNIQUE;

ANNEALING; PHOTOLUMINESCENCE; QUENCHING; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SUPERLATTICES; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33745725577     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2203203     Document Type: Article

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