Investigations on Via geometry and wetting behavior for the filling of through silicon Vias by copper electro deposition

Advanced Metallization Conference (AMC)

Volumn , Issue , 2008, Pages 623-630

  Hofmann, Lutz ^a   Kuechler, Matthias ^b   Gumprecht, Thomas ^a   Ecke, Ramona ^a   Schulz, Stefan ^a   Gessner, Thomas ^a,b  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

^b Fraunhofer Institute Reliability and Microintegration   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANGLE MEASUREMENT; CHEMICAL VAPOR DEPOSITION; CONTACT ANGLE; COPPER; INTERCONNECTION NETWORKS; METALLIZING; SILICON;

BENEFICIAL EFFECTS; DEPOSITION EXPERIMENTS; ELECTROLYTE SYSTEMS; ETCHING PROCESSES; FILLING PROCESSES; PLATING CHEMISTRIES; THROUGH-SILICON-VIAS; VOID FORMATIONS; WETTING BEHAVIORS;

WETTING;

EID: 55349121848     PISSN: 15401766     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. C. K. Tsang, P. S. Andry, et al., Proceedings of Mater. Res. Soc. Symp., 970 (2007)
2. P. Ramm, D. Bonfert, R. Ecke, et al., Proc. Advanced Metallization Conference, 159 (2001)
3. T. Fukushima, Y. Yamada, H. Kikuchi and M. Koyanagi, Interaction, Jap. Journal of Applied Physics, 45, No. 4B, 3030-3035 (2006)
4. K. Kondo, el al., J. Electrochemical Soc., 152, (11), H173-H177 (2005)
5. I. Lee, et al., J. Electrochem. Soc., 153, (7), pp. C521-C525 (2006)
6. G. Brunoldi, el al., J. Microelectronic Engineering, 82, 289-295 (2005)
7. Wei-Ping Dow and Ming-Yao Yen; Electrochemical and Solid-Stale Letters, 8 (11), C161-C165, 2005