2-D analysis of Ge implanted SiO2 surfaces by laser-induced breakdown spectroscopy

Spectrochimica Acta - Part B Atomic Spectroscopy

Volumn 63, Issue 10, 2008, Pages 1130-1138

  Yalçin, Şerife ^a   Örer, Sabiha ^a   Turan, Raşit ^b  

^a IZMIR INSTITUTE OF TECHNOLOGY   (Turkey)

^b MIDDLE EAST TECHNICAL UNIVERSITY   (Turkey)

Author keywords

Ion implantation; Laser induced breakdown spectroscopy; Lateral resolution; Surface analysis

Indexed keywords

ATOMIC PHYSICS; ATOMIC SPECTROSCOPY; ATOMS; CHEMICAL ANALYSIS; EMISSION SPECTROSCOPY; GERMANIUM; ION BOMBARDMENT; ION IMPLANTATION; LASER DAMAGE; LASER SPECTROSCOPY; LASERS; MICROSCOPIC EXAMINATION; OXIDES; PARTICLE SIZE; SILICA; SILICON COMPOUNDS; SPECTROSCOPIC ANALYSIS; SUBSTRATES; TWO DIMENSIONAL;

ABLATION DEPTHS; ADVANCED TECHNOLOGIES; ATOMIC FORCES; BREAKDOWN SPECTROSCOPIES; CRATER DEPTHS; CRATER SIZES; DEPTH RESOLUTIONS; DISTRIBUTION ANALYSES; EDX ANALYSES; ELEMENTAL COMPOSITIONS; ELEMENTAL DISTRIBUTIONS; GE ATOMS; IMPLANTATION DOSES; LASER ENERGIES; LATERAL RESOLUTION; MANUFACTURING PROCESSES; SEMI-QUANTITATIVE ANALYSES; SILICON OXIDES; SPECTRAL DATUMS; SPECTRAL EMISSIONS;

SPECTRUM ANALYSIS;

EID: 55249122628     PISSN: 05848547     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sab.2008.09.002     Document Type: Article

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