Structure and electronic properties of native and defected gallium nitride nanotubes

Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 372, Issue 46, 2008, Pages 6935-6939

  Moradian, Rostam ^a,b   Azadi, Sam ^a   Farahani, S Vasheghani ^c  

^a RAZI UNIVERSITY   (Iran)

^b INSTITUTE FOR STUDIES IN THEORETICAL PHYSICS AND MATHEMATICS IPM   (Iran)

^c UNIVERSITY OF WARWICK   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BUCKLING; ELECTRONIC PROPERTIES; GALLIUM NITRIDE; III-V SEMICONDUCTORS; NANOTUBES; NITROGEN; WIDE BAND GAP SEMICONDUCTORS;

AB INITIO DENSITY FUNCTIONAL THEORIES (DFT); BOND LENGTHS AND ANGLES; FORMATION ENERGIES; GALLIUM NITRIDE NANOTUBES; NANOTUBE DIAMETERS; NITROGEN VACANCIES; OPTIMIZED STRUCTURES; POLARIZED STRUCTURES;

DENSITY FUNCTIONAL THEORY;

EID: 55249099286     PISSN: 03759601     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physleta.2008.09.044     Document Type: Article

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