Nano gate dielectrics for low voltage operation of organic thin film transistors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 47, Issue 8 PART 1, 2008, Pages 6496-6501

  Kim, Kang Dae ^a   Kim, Dong Soo ^a   Kim, Chung Kyun ^b   Song, Chung Kun ^b  

^a Korea Institute of Machine and Materials   (South Korea)

^b Dong A University   (South Korea)

Author keywords

Aluminum oxide; Electronic devices; Insulator; Organic semiconductors

Indexed keywords

ALUMINA; ALUMINUM; DIELECTRIC MATERIALS; ELECTROLYSIS; GATES (TRANSISTOR); MOS CAPACITORS; OXYGEN; REFRACTORY METAL COMPOUNDS; SEMICONDUCTING ORGANIC COMPOUNDS; SILANES; SILICON COMPOUNDS; THICK FILMS; THIN FILM DEVICES; THIN FILM TRANSISTORS; THIN FILMS; THRESHOLD VOLTAGE; TRANSISTORS;

ALKYLTRICHLOROSILANE; ALUMINUM OXIDE; APPLICATIONS.; DRY PROCESSES; ELECTRONIC DEVICES; FABRICATION PROCESSES; GATE ELECTRODES; INSULATOR; LOW TEMPERATURES; LOW VOLTAGES; LOW-COST FABRICATIONS; ON/OFF CURRENT RATIOS; ORGANIC MONOLAYERS; ORGANIC SEMICONDUCTORS; ORGANIC THIN FILM TRANSISTORS; OXYGEN PLASMAS; PATTERNING PROCESSES; SELF-ASSEMBLY; TWO TYPES;

GATE DIELECTRICS;

EID: 55249095624     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.6496     Document Type: Article

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