III-nitride-based microarray light-emitting diodes with enhanced light extraction efficiency

Japanese Journal of Applied Physics

Volumn 47, Issue 8 PART 2, 2008, Pages 6757-6759

  Wu, Mount Learn ^a   Lee, Yun Chih ^a   Lee, Po Shen ^a   Kuo, Cheng Huang ^a   Chang, Jenq Yang ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

GaN; Light extraction efficiency; Micro array light emitting diode; Near ultraviolet light emitting diode

Indexed keywords

DIODES; DIRECTIONAL PATTERNS (ANTENNA); ETCHING; EXTRACTION; FINITE DIFFERENCE TIME DOMAIN METHOD; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT; LIGHT EMISSION; MICROSTRUCTURE; NITRIDES; NUMERICAL ANALYSIS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WELLS; TIME DOMAIN ANALYSIS; TIN; TITANIUM COMPOUNDS; ULTRAVIOLET RADIATION;

ACTIVE STRUCTURES; BEAM PATTERNS; DEEP ETCHINGS; DIFFERENT MICROSTRUCTURES; GAN; GAN LAYERS; GUIDED LIGHTS; INDIUM TIN OXIDES; INGAN/GAN; LIGHT EMITTING DIODE LEDS; LIGHT EXTRACTION EFFICIENCY; LIGHT EXTRACTIONS; MEASURED RESULTS; MICRO ARRAY LIGHT-EMITTING DIODE; MICRO HOLES; MICROARRAY LIGHT-EMITTING DIODES; MULTIPLE POINTS; NEAR-ULTRAVIOLET LIGHT-EMITTING DIODE; SPECTRAL REGIONS; TIME DOMAINS; TM POLARIZATIONS; ULTRA VIOLETS;

LIGHT EMITTING DIODES;

EID: 55149122218     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.6757     Document Type: Article

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