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Volumn 48, Issue 3, 2008, Pages 261-266
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Surface chemical bonding states and ferroelectricity of Ce-doped BiFeO 3 thin films prepared by sol-gel process
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Author keywords
BiFeO3 thin films; Ce doping; Dielectric and ferroelectric properties; Surface chemical bonding states
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Indexed keywords
BINDING ENERGY;
CAPACITANCE;
CAPACITORS;
CERIUM;
CERIUM COMPOUNDS;
CHEMICAL BONDS;
CHEMICAL PROPERTIES;
COLLOIDS;
DIELECTRIC DEVICES;
ELECTRIC EQUIPMENT;
FERROELECTRIC FILMS;
FERROELECTRICITY;
GELATION;
GELS;
IRON OXIDES;
LEAKAGE CURRENTS;
OXYGEN;
OXYGEN VACANCIES;
PHOTOELECTRON SPECTROSCOPY;
SEMICONDUCTING BISMUTH COMPOUNDS;
SEMICONDUCTING SILICON COMPOUNDS;
SILICON;
SOL-GEL PROCESS;
SOL-GELS;
SOLS;
THICK FILMS;
THIN FILMS;
BIFEO3 THIN FILMS;
BINDING ENERGY REGIONS;
BONDING STATES;
CE-DOPING;
DIELECTRIC AND FERROELECTRIC PROPERTIES;
DIELECTRIC CONSTANTS;
FERROELECTRIC PROPERTIES;
FILM CAPACITORS;
FILM SHIFTS;
GRAIN SIZES;
LOSS TANGENTS;
ORDERS OF MAGNITUDES;
REMNANT POLARIZATIONS;
SI SUBSTRATES;
SURFACE CHEMICAL BONDING STATES;
SURFACE CHEMICAL COMPOSITIONS;
X-RAY DIFFRACTIONS;
X-RAY PHOTOELECTRON SPECTROSCOPIES;
X RAY PHOTOELECTRON SPECTROSCOPY;
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EID: 55149108757
PISSN: 09280707
EISSN: None
Source Type: Journal
DOI: 10.1007/s10971-008-1825-x Document Type: Article |
Times cited : (95)
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References (27)
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