UV surface exposure for low temperature hydrophilic silicon direct bonding

Microsystem Technologies

Volumn 15, Issue 2, 2009, Pages 317-321

  Lin, Xiaohui ^a   Liao, Guanglan ^c   Tang, Zirong ^b   Shi, Tielin ^b  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^c Division of Optoelectronic Materials and Micronano Manufacture   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL ACTIVATION; HYDROPHILICITY; NONMETALS; PLASMA DIAGNOSTICS; SILICA; STRENGTH OF MATERIALS; SURFACE TREATMENT;

ADDITIONAL TREATMENTS; BOND QUALITIES; BONDABILITY; LOW TEMPERATURES; MIXED SPECTRUMS; MODIFICATION TREATMENTS; ORGANIC CONTAMINATIONS; OXIDATION EFFECTS; SILICON DIOXIDES; SILICON DIRECT BONDINGS; SILICON SURFACES; SURFACE EXPOSURES; SURFACE MODIFICATIONS; ULTRA VIOLETS; UV EXPOSURES; UV SOURCES;

SURFACE CLEANING;

EID: 55149088109     PISSN: 09467076     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00542-008-0703-3     Document Type: Article

References (11)

1. P Amirfeiz 2000 Formation of silicon structures by plasma-activated wafer bonding J Electrochem Soc 147 7 2693 2698 10.1149/1.1393591
2. SL Holl 2006 UV activation treatment for hydrophobic wafer bonding J Electrochem Soc 153 7 G613 G616 10.1149/1.2196673
3. + Ar electron cyclotron resonance microwave plasma at low temperatures. J Appl Phys 85(3):1911-1915
4. + Ar electron cyclotron resonance microwave plasma at low temperatures. J Appl Phys 86(4):2367-2367]
5. 3:HF for wafer bonding applications J Electrochem Soc 143 5 1709 1714 10.1149/1.1836705
6. J Ruzyllo GT Duranko AM Hoff 1987 Preoxidation UV treatment of silicon-wafers J Electrochem Soc 134 8A 2052 2055 10.1149/1.2100818
7. A Sanz-Velasco 2003 Room temperature wafer bonding using oxygen plasma treatment in reactive ion etchers with and without inductively coupled plasma J Electrochem Soc 150 2 G155 G162 10.1149/1.1536182
8. S Schlautmann 2003 Fabrication of a microfluidic chip by UV bonding at room temperature for integration of temperature-sensitive layers J Micromech Microeng 13 4 S81 S84 10.1088/0960-1317/13/4/313
9. QY Tong 2004 Fluorine-enhanced low-temperature wafer bonding of native-oxide covered Si wafers Appl Phys Lett 85 17 3731 3733 10.1063/1.1809279
10. JR Vig JW Lebus 1976 UV-ozone cleaning of surfaces IEEE Trans Parts Hybrids Packag 12 4 365 370 10.1109/TPHP.1976.1135156
11. XX Zhang JP Raskin 2005 Low-temperature wafer bonding: a study of void formation and influence on bonding strength J Microelectromech Syst 14 2 368 382 10.1109/JMEMS.2004.839027