Effect of aluminum concentration on the interfacial reactions of Sn-3.0Ag-xAl solders with copper and ENIG metallizations

Journal of Electronic Materials

Volumn 37, Issue 12, 2008, Pages 1858-1862

  Xia, Y H ^a   Jee, Y K ^b   Yu, J ^b   Lee, T Y ^c  

^a ZHEJIANG UNIVERSITY OF TECHNOLOGY   (China)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^c Hanbat National University   (South Korea)

Author keywords

Interfacial reaction; Intermetallic compound; Lead free solder; Sn Ag Al

Indexed keywords

ALUMINUM ADDITIVES; ALUMINUM CONCENTRATIONS; CONTINUOUS; ELECTROLESS NICKEL IMMERSIONS; INTERFACIAL REACTION; INTERFACIAL REACTION PRODUCTS; INTERFACIAL REACTIONS; INTERMETALLIC COMPOUND; INTERMETALLIC COMPOUNDS; LEAD-FREE SOLDER; METALLIZATIONS; RICH PHASES; SN-AG-AL; SOLDER JOINTS;

ALUMINA; ALUMINUM; BRAZING; CONCENTRATION (PROCESS); COPPER; ELECTROLESS PLATING; INTERMETALLICS; LEAD; LEAD COMPOUNDS; LIGHT METALS; METALLIZING; NICKEL ALLOYS; PHASE INTERFACES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INTERMETALLICS; SILVER; SOLDERING ALLOYS; SPALLING; WELDING;

TIN;

EID: 54949151844     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-008-0548-7     Document Type: Article

References (19)

1. M. Abtew G. Selvaduray 2000 Mater. Sci. Eng. Rep. 27 95 10.1016/S0927-796X(00)00010-3
2. K. Suganuma 2001 Curr. Opin. Solid State Mater. Sci. 5 55 10.1016/S1359-0286(00)00036-X
3. B. Ebersberger and R. Bauer, Proceedings of Electronic Components and Technology Conference 2004 (Las Vegas, NV, Jun. 2004), p. 683.
4. H.C. Kim, Proceedings Electronic Components and Technology Conference 2007 (Reno, NV, May 2007), p. 962.
5. D.W. Kim, Proceedings Electronic Components and Technology Conference 2007 (Reno, NV, May 2007), p. 1614.
6. T.T. Mattila, Proceedings Electronic Components and Technology Conference 2007 (Reno, NV, May 2007), p. 381.
7. A. Syed, Proceedings Electronics Packaging Technology Conference 2006 (Singapore, Dec. 2006), p. 404.
8. I.E. Anderson 2006 J. Electron. Mater. 35 94 10.1007/s11664-006-0190-1
9. T.C. Chiu, Proceedings Electronic Components Technology Conference 2004 (Las Vegas, NV, Jun. 2004), p. 1256.
10. K.S. Kim 2003 Microelectron. Reliab. 43 259 10.1016/S0026-2714(02)00239-1
11. T.C. Chang 2003 J. Cryst. Growth 250 236 10.1016/S0022-0248(02)02252-2
12. T. Junichi and S. Naoto, 10th Symposium on Microjoining and Assembly Technology in Electronics (Yokohama, Japan, Feb. 2004).
13. Y.C. Sohn J. Yu S.K. Kang D.Y. Shih W.K. Choi 2004 J. Electron. Mater. 33 790 10.1007/s11664-004-0243-2
14. J.Y. Song J. Yu 2006 J. Mater. Res. 21 2261 10.1557/jmr.2006.0273
15. K.S. Kim K.W. Ryu C.H. Yu J.M. Kim 2005 Microelectron. Reliab. 45 647 10.1016/j.microrel.2004.07.005
16. T. Lchitsubo E. Matsubara K. Fujiwara 2005 J. Alloy. Comp. 392 200 10.1016/j.jallcom.2004.09.043
17. K. Zeng K.N. Tu 2002 Mater. Sci. Eng. Rep. 38 55 10.1016/S0927-796X(02) 00007-4
18. C.W. Hwang K. Suganuma M. Kiso S. Hashimoto 2003 J. Mater. Res. 18 2540 10.1557/JMR.2003.0354
19. M. He W.H. Lau G.J. Qi Z. Chen 2004 Thin Solid Films 462 376 10.1016/j.tsf.2004.05.058