Real time spectroscopic ellipsometry of sputtered CdTe, CdS, and CdTe 1-xS x thin films for photovoltaic applications

Physica Status Solidi (A) Applications and Materials Science

Volumn 205, Issue 4, 2008, Pages 901-904

  Li, Jian ^a   Podraza, N J ^a,b   Collins, R W ^a  

^a UNIVERSITY OF TOLEDO   (United States)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CDTE/CDS HETEROJUNCTIONS; CRYSTALLINE SILICON WAFERS; DEPOSITION TEMPERATURES; DIELECTRIC FUNCTIONS; GRAIN SIZES; KEY PROCESSES; KEY VARIABLES; MAGNETRON SPUTTERING PROCESSES; NUCLEATION AND GROWTHS; PHOTOVOLTAIC APPLICATIONS; POLYCRYSTALLINE; POLYCRYSTALLINE FILMS; REAL TIMES; RF POWERS;

CADMIUM ALLOYS; DATA STORAGE EQUIPMENT; ELLIPSOMETRY; GRAIN GROWTH; MAGNETRON SPUTTERING; METALLIC COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON WAFERS; SPECTROSCOPIC ELLIPSOMETRY; THICK FILMS; THIN FILMS;

CADMIUM COMPOUNDS;

EID: 54849441094     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200777892     Document Type: Article

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