RF hydrogen-plasma-related defects in thin SiO2/p-Si structures

Vacuum

Volumn 61, Issue 2-4, 2001, Pages 199-203

  Simeonov, S ^a   Yourukov, I ^a   Kafedjiiska, E ^a   Szekeres, A ^a  

^a INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

Author keywords

Deep levels; DLTS measurement; Electrical properties; RF hydrogen plasma treatment; SiO2 Si structure

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; PLASMA APPLICATIONS; SILICA; SILICON; THIN FILMS;

HYDROGEN PLASMA TREATMENT;

SURFACE STRUCTURE;

EID: 0035858590     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(00)00478-4     Document Type: Conference Paper

References (8)

1. Alexandrova S, Szekeres A. Thin Solid Films 1999;343-344:389-92.
2. Alexandrova S, Szekeres A. Phys Stat Sol A, 1986;96:363-6.
3. Szekeres A. Radiat Effects Defects Solids 1991;116:145-8.
4. Johnson NM, Herring C. Phys Rev B 1988;38:1581-4.
5. Reinberg AR. Electrochemical Society Meeting, San Francisco, May 1974, US Patent No. 3757733.
6. Szekeres A, Alexandrova S. Vacuum 1996;47:1483-6.
7. Yamasaki K, Yoshida M, Sugano T. Jpn J Appl Phys 1979;18:113-22.
8. Kimerling LC. In: Urli NB, Corbett JW, editors, Radiation effects in semiconductors 1976. p. 221. The Institute of Physics, Bristol.