Generation and reduction in SiO2 /Si interface state density during plasma etching processes

Journal of Applied Physics

Volumn 104, Issue 6, 2008, Pages

  Ishikawa, Yasushi ^a   Ichihashi, Yoshinari ^a   Yamasaki, Satoshi ^b   Samukawa, Seiji ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 54749117454     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2982408     Document Type: Article

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