Post-annealing and passivations of transparent bottom gate IGZO thin film transistors

Digest of Technical Papers - SID International Symposium

Volumn 39, Issue 3, 2008, Pages 1243-1246

  Cho, Doo Hee ^a   Yang, Shinhyuk ^a   Shin, Jaeheon ^a   Ryu, Min Ki ^a   Cheong, Woo Seok ^a   Byun, Chunwon ^a   Yoon, Sung Min ^a   Park, Sang Hee Ko ^a   Lee, Jeong Ik ^a   Hwang, Chi Sun ^a   Chu, Hye Yong ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ALUMINUM OXIDE; ANNEALING; GALLIUM COMPOUNDS; INVERSE PROBLEMS; SEMICONDUCTING INDIUM COMPOUNDS; SILICA; THIN FILM CIRCUITS;

BIAS STABILITY; EFFECTIVE MATERIALS; FIELD-EFFECT MOBILITIES; INORGANIC MATERIALS; PLANAR STRUCTURE; POLYMER MATERIALS; SUBTHRESHOLD SWING; TWO-STEP ANNEALING;

THIN FILM TRANSISTORS;

EID: 54549092500     PISSN: 0097966X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1889/1.3069362     Document Type: Conference Paper

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