Gate length scaling in high fMAX Si/SiGe n-MODFET

European Solid-State Device Research Conference

Volumn , Issue , 2002, Pages 167-170

  Aniel, F ^a   Enciso Aguilar, M ^a   Crozat, P ^a   Adde, R ^a   Hackbarth, T ^b   Seiler, U ^b   Herzog, H J ^b   Konig, U ^b   Von Kanel H ^c  

^a UNIVERSITÉ PARIS SACLAY   (France)

^b DAIMLER AG   (Germany)

^c ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD EFFECT TRANSISTORS; GERMANIUM;

GATE LENGTH SCALING; MAXIMUM OSCILLATION FREQUENCY; MINIMUM NOISE FIGURE; NOISE PARAMETERS; NOISE PERFORMANCE; NON-STATIONARY TRANSPORTS; SHORT-CHANNEL EFFECT; STRAINED CHANNELS;

MODFETS;

EID: 84907694573     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2002.194896     Document Type: Conference Paper

References (13)

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