Dependence of the photocurrent on a bias of a p-InP/n-CdS heterojunction formed by laser ablation

Solid State Communications

Volumn 103, Issue 11, 1997, Pages 635-637

  Ullrich, B ^a   Dushkina, N M ^a,d   Ezumi, H ^b   Keitoku, S ^c   Kobayashi, T ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b Shimane College of Nursing   (Japan)

^c Hiroshima Women's University   (Japan)

^d CENTRAL LABORATORY OF OPTICAL STORAGE AND PROCESSING OF INFORMATION   (Bulgaria)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; INTERFACES (MATERIALS); LASER ABLATION; PHOTOELECTRICITY; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE;

CARRIER INJECTION; PHOTOCURRENT;

HETEROJUNCTIONS;

EID: 0031237295     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(97)00262-7     Document Type: Article

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