CMOS integration of dual work function phase controlled Ni FUSI with simultaneous silicidation of NMOS (NiSi) and PMOS (Ni-rich silicide) gates on HfSiON

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 2005, Issue , 2005, Pages 646-649

  Lauwers, A ^a   Veloso, A ^a   Hoffmann, T ^a   Van Dal, M J H ^b   Vrancken, C ^a   Brus, S ^a   Locorotondo, S ^a   De Marneffe, J F ^a   Sijmus, B ^a   Kubicek, S ^a   Chiarella, T ^a   Pawlak, M A ^a   Opsomer, K ^a   Niwa, M ^c   Mitsuhashi, R ^c   Anil, K G ^a   Yu, H Y ^a   Demeurisse, C ^a   Verbeeck, R ^a   De Potter, M ^a   Absil, P ^a   Maex, K ^a   Jurczak, M ^a   Biesemans, S ^a   Kittl, J A ^d   more..

^a IMEC   (Belgium)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

^c Matsushita   (Belgium)

^d TEXAS INSTRUMENTS   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC INSULATORS; HAFNIUM COMPOUNDS; LINEWIDTH; MOS DEVICES; OSCILLATORS (ELECTRONIC);

NMOS; PMOS; THICKNESS VARIATION;

GATES (TRANSISTOR);

EID: 33847700082     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

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4. K. G. Anil et al., Symp. VLSI Tech., 190 (2004).
5. A. Veloso et al., IEDM Tech. Dig., 855 (2004).
6. K. Takahashi et al., IEDM Tech. Dig., 91 (2004).
7. M. Terai et al., Symp. VLSI Tech., 68 (2005).