Direct wafer bonding of GaInAsP/InP membrane structure on silicon-on-insulator substrate

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 11, 2006, Pages 8717-8718

  Maruyama, Takeo ^a,b   Okumura, Tadashi ^a   Arai, Shigehisa ^a,b  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Direct wafer bonding; GaInAsP InP membrane structure; Photonic integrated circuit; Silicon on insulator

Indexed keywords

INTEGRATED OPTICS; PHOTOLUMINESCENCE; PHOTONICS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM WELLS; SILICON ON INSULATOR TECHNOLOGY;

DIRECT WAFER BONDING; PHOTOLUMINESCENCE INTENSITY; PHOTONIC INTEGRATED CIRCUITS;

WAFER BONDING;

EID: 34547647766     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.8717     Document Type: Article

References (9)

1. R. A. Soref and J. P. Lorenzo: IEEE J. Quantum Electron. 22 (1986) 873.
2. M. Razeghi, M. Defour, R. Blondeau, F. Omnes, P. Maurel, O. Acher, F. Briliouet, J. C. C-Fan and J. Salerno: Appl. Phys. Lett. 53 (1988) 2389.
3. H. Wada and T. Kamijoh: IEEE Photonics Technol. Lett. 8 (1996) 173.
4. G. Roelkens, D. Van Thourhout and R. Baets: Electron. Lett. 41 (2005) 561.
5. T. Okamoto, N. Nunoya, Y. Onodera, S. Tamura and S. Arai: Electron. Lett. 37 (2001) 1455.
6. T. Okamoto, N. Nunoya, Y. Onodera, T. Yamazaki, S. Tamura and S. Arai: IEEE J. Sel. Top. Quantum. Electron. 9 (2003) 1361.
7. S. Sakamoto, T. Okamoto, T. Yamazaki, S. Tamura and S. Arai: IEEE J. Sel. Top. Quantum Electron. 11 (2005) 1174.
8. H. Park, A. W. Fang, S. Kodama and J. E. Bowers: Opt. Express 13 (2005) 9460.
9. S. T. Tewksbury, L. A. Hornak, H. E. Nariman and S. P. McGinnis: IEEE Trans. Comput. Hybrids Manuf. Technol. 16 (1993) 674.