High-performance InGaAs/InP composite-channel high electron mobility transistors grown by metal-organic vapor-phase epitaxy

Japanese Journal of Applied Physics

Volumn 47, Issue 4 PART 2, 2008, Pages 2828-2832

  Sugiyama, Hiroki ^a   Kosugi, Toshihiko ^a   Yokoyama, Haruki ^a   Murata, Koichi ^a   Yamane, Yasuro ^a   Tokumitsu, Masami ^a   Enoki, Takatomo ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Breakdown voltage; Composite channel; HEMT; InGaAs; InP; MOVPE

Indexed keywords

CRYSTAL GROWTH; CUTOFF FREQUENCY; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; IONIZATION OF GASES; METALLORGANIC VAPOR PHASE EPITAXY; SECURITY OF DATA; SEMICONDUCTING INDIUM; TESTING; TRANSISTORS; VAPORS;

BREAKDOWN VOLTAGE; COMPOSITE CHANNEL; HEMT; INGAAS; INP; MOVPE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 54249128356     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.2828     Document Type: Article

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