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Volumn 84, Issue 20, 2004, Pages 4026-4028

Analysis of plasma treatment and vapor heat treatment for thin-film transistors by extracting trap densities at front and back interfaces

(5) Kimura, Mutsumi a Abe, Daisuke b Inoue, Satoshi b Shimoda, Tatsuya b Tam, Simon W B c

a RYUKOKU UNIVERSITY (Japan)

b SEIKO EPSON CORPORATION (Japan)

c Cambridge Research Laboratory of Epson (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TRANSPORT PROPERTIES; EXCIMER LASERS; GATES (TRANSISTOR); GRAIN BOUNDARIES; HEAT TREATMENT; HYDROGEN; INTERFACES (MATERIALS); PLASMA APPLICATIONS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYSILICON;

HYDROGEN PLASMA TREATMENT; OXYGEN PLASMA TREATMENT; TRAP DENSITIES; VAPOR HEAT TREATMENT;

THIN FILM TRANSISTORS;

EID: 2942685609 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1751215 Document Type: Article

Times cited : (5)

References (9)

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