Thermal annealing effects on the electrical characteristics of the back interface in nano-silicon-on-insulator channel

Applied Physics Letters

Volumn 90, Issue 14, 2007, Pages

  Cho, Won Ju ^a   Ahn, Chang Geun ^b  

^a Kwangwoon University   (South Korea)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC PROPERTIES; FIELD EFFECT TRANSISTORS; INTERFACES (MATERIALS); NITROGEN; RAPID THERMAL ANNEALING; SILICON ON INSULATOR TECHNOLOGY;

BACK INTERFACE; METAL-POINT-CONTACT; NANO-SILICON-ON-INSULATOR CHANNEL;

NANOSTRUCTURED MATERIALS;

EID: 34047252167     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2719641     Document Type: Article

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