Localization and nonlinear transport in single walled carbon nanotube fibers

Journal of Applied Physics

Volumn 104, Issue 7, 2008, Pages

  Ksenevich, V K ^a   Odzaev, V B ^a   Martunas, Z ^b   Seliuta, D ^b   Valusis, G ^b   Galibert, J ^c   Melnikov, A A ^d   Wieck, A D ^d   Novitski, D ^e   Kozlov, M E ^e   Samuilov, V A ^f  

^a BELARUSIAN STATE UNIVERSITY   (Belarus)

^b CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

^c INSA   (France)

^d RUHR UNIVERSITY BOCHUM   (Germany)

^e UNIVERSITY OF TEXAS AT DALLAS   (United States)

^f Stony Brook University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON FIBERS; ELECTRIC RESISTANCE; FIBERS; MAGNETIC FIELD EFFECTS; MAGNETORESISTANCE; NANOCOMPOSITES; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOTUBES; SINGLE-WALLED CARBON NANOTUBES (SWCN); THREE DIMENSIONAL; TURBULENT FLOW;

ELECTRICAL; HIGH FIELDS; LOW FIELDS; LOW TEMPERATURES; MAGNETOTRANSPORT PROPERTIES; MICROWAVE FIELDS; NONLINEAR TRANSPORTS; POSITIVE MAGNETORESISTANCES; POSITIVE MR; SINGLE-WALLED CARBON NANOTUBES; TEMPERATURE INCREASES; TERAHERTZ RADIATIONS; TUNNELING MODELS; VARIABLE RANGE HOPPING;

CARBON NANOTUBES;

EID: 54049103979     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2996036     Document Type: Article

References (40)

1. M. Bockrath, D. H. Cobden, P. L. McEuen, N. G. Chopra, A. Zettl, A. Thess, and R. E. Smalley, Science 0036-8075 10.1126/science.275.5308.1922 275, 1922 (1997).
2. M. Bockrath, D. H. Cobden, J. Lu, A. G. Rinzler, R. E. Smalley, L. Balents, and P. L. McEuen, Nature (London) 0028-0836 10.1038/17569 397, 598 (1999).
3. S. Frank, P. Poncharal, Z. L. Wang, and W. De Heer, Science 0036-8075 10.1126/science.280.5370.1744 280, 1744 (1998).
4. J. Robertson, Mater. Today 1369-7021 10.1016/S1369-7021(04)00448-1 7, 46 (2004).
5. J. R. Stetter and G. J. Maclay, Advanced Micro and Nanosystems 1, 357 (2004).
6. V. Krstic, S. Roth, and M. Burghard, Phys. Rev. B 0163-1829 10.1103/PhysRevB.62.R16353 62, R16353 (2000).
7. A. B. Kaiser, G. Dusberg, and S. Roth, Phys. Rev. B 0163-1829 10.1103/PhysRevB.57.1418 57, 1418 (1998).
8. G. T. Kim, S. H. Jhang, J. G. Park, Y. W. Park, and S. Roth, Synth. Met. 0379-6779 10.1016/S0379-6779(00)00551-8 117, 123 (2001).
9. G. Baumgartner, M. Carrard, L. Zuppiroli, W. Bacsa, W. A. de Heer, and L. Forro, Phys. Rev. B 0163-1829 10.1103/PhysRevB.55.6704 55, 6704 (1997).
10. B. W. Smith, Z. Benes, D. E. Luzzi, J. E. Fischer, D. A. Walters, M. J. Casavant, J. Schmidt, and R. E. Smalley, Appl. Phys. Lett. 0003-6951 10.1063/1.127078 77, 663 (2000).
11. H. H. Gommans, J. W. Alldredge, H. Tashiro, J. Park, J. Magnuson, and A. G. Rinzler, J. Appl. Phys. 0021-8979 10.1063/1.1287128 88, 2509 (2000).
12. P. Launois and P. Poulin, Encyclopedia of Nanoscience and Nanotechnology 4, 1 (2004).
13. B. Vigolo, A. Penicaud, C. Coulon, C. Sauder, R. Pailler, C. Journet, P. Bernier, and P. Poulin, Science 0036-8075 10.1126/science.290.5495.1331 290, 1331 (2000); B. Vigolo, P. Poulin, M. Lucas, P. Launois, and P. Bernier, Appl. Phys. Lett. 0003-6951 10.1063/1.1497706 81, 1210 (2002).
14. W. Zhou, J. Vavro, C. Guthy, K. I. Winey, J. E. Fischer, L. M. Ericson, S. Ramesh, R. Saini, V. A. Davis, C. Kittrel, M. Pasqualli, R. H. Hauge, and R. E. Smalley, J. Appl. Phys. 0021-8979 10.1063/1.1627457 95, 649 (2004).
15. S. Badaire, V. Pichot, C. Zakri, P. Poulin, P. Launois, J. Vavro, C. Guthy, M. Chen, and J. E. Fischer, J. Appl. Phys. 0021-8979 10.1063/1.1810640 96, 7509 (2004).
16. V. A. Davis, L. M. Ericson, A. N. G. Parra-Vasques, H. Fan, Y. Wang, V. Prieto, J. A. Longoria, S. Ramesh, R. K. Saini, C. Kittrell, W. E. Billups, W. W. Adams, R. H. Hauge, R. E. Smalley, and M. Pasquali, Macromolecules 0024-9297 10.1021/ma0352328 37, 154 (2004).
17. M. E. Kozlov, R. C. Capps, W. M. Sampson, V. H. Ebron, J. P. Ferraris, and R. H. Baughman, Adv. Mater. (Weinheim, Ger.) 0935-9648 10.1002/adma. 200401130 17, 614 (2005).
18. D. Seliuta, I. Kasalynas, V. Tamosiunas, S. Balakauskas, Z. Martunas, S. Asmontas, G. Valusis, A. Lisauskas, H. G. Roskos, and K. Kohler, Electron. Lett. 0013-5194 10.1049/el:20061224 42, 825 (2006).
19. M. S. Fuhrer, M. L. Cohen, A. Zettl, and V. Crespi, Solid State Commun. 0038-1098 10.1016/S0038-1098(98)00520-1 109, 105 (1998).
20. M. S. Fuhrer, W. Holmes, P. L. Richards, P. Delaney, S. G. Louie, and A. Zettl, Synth. Met. 0379-6779 10.1016/S0379-6779(98)00305-1 103, 2529 (1999).
21. B. I. Shklovskii and A. L. Efros, Electronic Properties of Doped Semiconductors (Springer-Verlag, Berlin, 1984).
22. P. Sheng, Phys. Rev. B 0163-1829 10.1103/PhysRevB.21.2180 21, 2180 (1980).
23. R. M. Hill, Philos. Mag. 24, 1307 (1971).
24. M. Pollak and I. Riess, J. Phys. C 0022-3719 10.1088/0022-3719/9/12/017 9, 2339 (1976).
25. B. I. Shklovskii, Sov. Phys. Semicond. 10, 855 (1976).
26. B. I. Shklovskii, Sov. Phys. Semicond. 6, 1964 (1972).
27. A. N. Aleshin and I. S. Shlimak, Sov. Phys. Semicond. 21, 289 (1987).
28. A. B. Kaiser and Y. W. Park, Synth. Met. 0379-6779 10.1016/j.synthmet. 2005.07.245 152, 181 (2005).
29. S. W. Lee, D. S. Lee, H. Y. Yu, and E. E. B. Campbell, Appl. Phys. A: Mater. Sci. Process. 0947-8396 10.1007/s00339-003-2363-6 78, 283 (2004).
30. G. T. Kim, J. Muster, V. Krstic, J. G. Park, Y. W. Park, S. Roth, and M. Burghard, Appl. Phys. Lett. 0003-6951 10.1063/1.126197 76, 1875 (2000).
31. J. G. Park, B. Kim, S. H. Lee, A. B. Kaiser, S. Roth, and Y. W. Park, Synth. Met. 135-136, 299 (2003). 0379-6779
32. B. Fisher, K. B. Chashka, L. Patlagan, and G. M. Reisner, Phys. Rev. B 0163-1829 10.1103/PhysRevB.68.134420 68, 134420 (2003).
33. U. Sivan, O. Entin-Wohlman, and Y. Imry, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.60.1566 60, 1566 (1988).
34. A. W. P. Fung, Phys. Rev. B 0163-1829 10.1103/PhysRevB.49.17325 49, 17325 (1994).
35. A. B. Pakhomov, X. X. Zhang, H. Liu, X. R. Wang, H. J. Huang, and S. H. Yang, Physica B (Amsterdam) 279, 41 (2000). 0921-4526
36. S. Shekhar, V. Prasad, and S. V. Subramanyam, Phys. Lett. A 0375-9601 10.1016/j.physleta.2006.09.076 361, 500 (2007).
37. A. Juozapavicius, L. Ardaravicius, A. Suziedelis, A. Kozic, J. Gradauskas, J. Kundrotas, D. Seliuta, E. Sirmulis, S. Asmontas, G. Valusis, H. G. Roskos, and K. Kohler, Semicond. Sci. Technol. 0268-1242 10.1088/0268-1242/ 19/4/143 19, S436 (2004).
38. D. Seliuta, E. Sirmulis, V. Tamosiunas, S. Balakauskas, S. Asmontas, A. Suziedelis, J. Gradauskas, G. Valusis, A. Lisauskas, H. G. Roskos, and K. Kohler, Electron. Lett. 0013-5194 10.1049/el:20040412 40, 631 (2004).
39. J. Pozela, in Topics of Applied Physics, edited by, L. Reggiani, (Springer-Verlag, Berlin, 1985), Vol. 58, pp. 113-147.
40. V. K. Ksenevich, D. Seliuta, Z. Martunas, I. Kasalynas, G. Valusis, J. Galibert, M. E. Kozlov, and V. A. Samuilov, Acta Phys. Pol. A 113, 1039 (2008).