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Volumn 19, Issue 4 SPEC. ISS., 2004, Pages

Microwave sensor based on modulation-doped GaAs/AlGaAs structure

(12) Juozapavičius, Aušrius a Ardaravičius, Linas a Sužiedelis, Algirdas a,b Kozič, Antoni a Gradauskas, Jonas a,b Kundrotas, Jurgis a Seliuta, Dalius a Širmulis, Edmundas a Ašmontas, Steponas a Valušis, Gintaras c Roskos, Hartmut G c Köhler, Klaus d

a CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY (Lithuania)

b VILNIUS GEDIMINAS TECHNICAL UNIVERSITY (Lithuania)

c GOETHE UNIVERSITY (Germany)

d FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; ELECTRIC FIELD EFFECTS; ELECTRON GAS; FREQUENCIES; MICROWAVES; MODULATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SENSITIVITY ANALYSIS; SENSORS; SPURIOUS SIGNAL NOISE;

BOLOMETRIC DETECTORS; DIFFUSION-COOLED MIXERS;

HETEROJUNCTIONS;

EID: 11144353693 PISSN: 02681242 EISSN: None Source Type: Journal
DOI: 10.1088/0268-1242/19/4/143 Document Type: Conference Paper

Times cited : (15)

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