Comparison of 1D and 2D model of quantum effects in the simulation of sub-50 nm double-gate MOSFETs

MIPRO 2007 - 30th Jubilee International Convention Proceedings: Microelectronics, Electronics and Electronic Technologies, Hypermedia and Grid Systems, MEE /HGS

Volumn 1, Issue , 2007, Pages 78-83

  Poljak, M ^a   Biljanovic P ^a   Suligoj, T ^a  

^a UNIVERSITY OF ZAGREB   (Croatia)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 53149098136     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. D. Hisamoto et al., "FinFET-A Self-Aligned Double-Gate MOSFET Scalable to 20 nm", IEEE Trans. on Electron Devices, vol. 47, pp. 2320-2325, 2000.
2. P. E. Thompson et al., "Vertical SiGe-based Silicon-on-Nothing (SON) Technology for sub-30 nm MOS devices", Materials Science in Semiconductor Processing, vol. 8, pp. 51-57, 2005.
3. V. Jovanović et al., "Characteristics of 30 nm Long Vertical Silicon-on-Nothing (SON) MOSFET", Proceedings of MIPRO, 2005.
4. International Technology Roadmap for Semiconductors, 2005 Edition, www.itrs.net
5. D. Vasileska et al., "Role of quantization effects in the operation of ultrasmall MOSFETs and SOI device structures", Microelectronic Engineering, vol.63, pp. 233-240, 2002.
6. Z. Ren et al., "nanoMOS 2.5: A Two-Dimensional Simulator for Quantum Transport in Double-Gate MOSFETs", IEEE Trans. on Electron Devices, special issue on Nanoelectronics, vol. 50, pp. 1914-1925, 2003.
7. R. Venugopal et al., "Simulating Quantum Transport in Nanoscale Transistors: Real versus Mode-Space Approach", J. Appl. Phys., vol. 92, pp. 3730-3739, 2002.
8. S. Datta, "Nanoscale device modeling: the Green's function method", Superlattices and Microstructures, vol. 28, pp. 253-278, 2000.