Growth of columnar quantum dots by metalorganic vapor-phase epitaxy for semiconductor optical amplifiers

Japanese Journal of Applied Physics

Volumn 47, Issue 4 PART 2, 2008, Pages 2888-2892

  Kawaguchi, Kenichi ^a,b   Yasuoka, Nami ^a,b   Ekawa, Mitsuru ^a,b   Ebe, Hiroji ^c   Akiyama, Tomoyuki ^d   Sugawara, Mitsuru ^a,b,d   Arakawa, Yasuhiko ^c,e  

^a FUJITSU LABORATORIES LTD   (Japan)

^b Optoelectronic Industry and Technology Development Association   (Japan)

^c INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^d QD Laser Inc   (Japan)

^e UNIVERSITY OF TOKYO   (Japan)

Author keywords

Columnar QDs; MOVPE; Plolarization; SOA

Indexed keywords

ASPECT RATIO; CRYSTAL GROWTH; ELECTRIC CONDUCTIVITY; LIGHT AMPLIFIERS; OPTICAL SWITCHES; OPTICAL WAVEGUIDES; OPTOELECTRONIC DEVICES; PHOTORESISTS; POLARIZATION; QUANTUM ELECTRONICS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR OPTICAL AMPLIFIERS; STORAGE ALLOCATION (COMPUTER); VAPOR PHASE EPITAXY; VAPORS;

BARRIER THICKNESSES; COLUMNAR QDS; DOMINANT POLARIZATIONS; HIGH ASPECT RATIOS; LATERAL SIZES; LOW GROWTH TEMPERATURES; MAGNETIC; METALORGANIC; MOVPE; PLOLARIZATION; POLARIZATION DEPENDENT GAINS; QUANTUM DOTS; SOA; TENSILE; TM-MODE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 52949099674     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.2888     Document Type: Article

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