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Volumn 282, Issue 1-2, 2005, Pages 1-6
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Atomic hydrogen cleaning of low-index GaAs surfaces
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Author keywords
A1. Reflection high energy electron diffraction; A1. Surface processes; A1. Surface structure; A3. Molecular beam epitaxy; B2. Semiconducting III IV materials
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Indexed keywords
CRYSTAL GROWTH;
DESORPTION;
HYDROGEN;
MOLECULAR BEAM EPITAXY;
MORPHOLOGY;
REFLECTION HIGH ENERGY ELECTRON DIFFRACTION;
SURFACE ROUGHNESS;
SURFACE STRUCTURE;
SEMICONDUCTING III-IV MATERIALS;
SURFACE ORIENTATIONS;
SURFACE PROCESSES;
THERMAL DESORPTION;
SEMICONDUCTING GALLIUM ARSENIDE;
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EID: 22644443967
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2005.04.046 Document Type: Article |
Times cited : (25)
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References (15)
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