Evaluation of losses in VSC-HVDC transmission system

IEEE Power and Energy Society 2008 General Meeting: Conversion and Delivery of Electrical Energy in the 21st Century, PES

Volumn , Issue , 2008, Pages

  Pang, Hui ^a   Tang, Guangfu ^a   He, Zhiyuan ^b  

^a CHINA ELECTRIC POWER RESEARCH INSTITUTE   (China)

^b NONE

Author keywords

Converter; IGBT; Loss; Valve; VSC HVDC

Indexed keywords

ELECTRIC CONVERTERS; ELECTRIC POWER TRANSMISSION; HVDC POWER TRANSMISSION; POTENTIAL ENERGY; POTENTIAL ENERGY SURFACES; POWER TRANSMISSION; SPATIAL VARIABLES CONTROL;

21ST CENTURY; CONVERTER; ELECTRICAL ENERGY; IGBT; LOSS; LOSS EVALUATION; OPERATING LOSSES; VALVE; VSC-HVDC;

ENERGY CONVERSION;

EID: 52349113227     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PES.2008.4596740     Document Type: Conference Paper

References (26)

1. Determination of power losses in high-voltage direct current (HVDC) converter stations, IEC Standard 61803, 1999.
2. Bjarne Andersen, Henri Baerd, Hakon Borgen, et al., "DC Transmission using Voltage Sourced Converters," CIGRE, Paris, FR, WG B4-37, May, 2004
3. "It's time to connect," ABB Power Systems, Ludvika, Sweden, Oct., 2007. http://library.abb.com/GLOBAL/SCOT/scot221.nsf/VetityDispIay/ 77DE85AF4E81D237C125737D004D210D/$File/It%20is%20time%20to%20co nnect%20rev%204%202007-10%20web.pdf
4. Hefner A. R., "Analytical Modeling of Device-circuit Interactions for the Power Insulated Gate Bipolar Transistor (IGBT)," in Proc. 1988 IEEE Industry Application Society Annual Meeting pp. 606-614.
5. Hefner A. R., "Improved Understanding for the Transient Operation of the Power Insulated Gate Bipolar Transistor (IGBT)," in Proc. 1989 IEEE Power Electronics special Conference, pp. 303-313.
6. Hefner A. R., "An Investigation of the Drive Circuit Requirements for the Power Insulated Gate Bipolar Transistor (IGBT)," in Proc. 1990 IEEE Power Electronics special Conference, pp. 126-137.
7. Hefner A. R., "Analytical Modeling of Device-circuit Interactions for the Power Insulated Gate Bipolar Transistor (IGBT)," IEEE Transactions on Industry Applications, vol. 26, pp. 995-1005, 1990.
8. Hefner A. R., "An Improved Understanding for the Transient Operation of the Power Insulated Gate Bipolar Transistor (IGBT)," IEEE Transactions on Power Electronics, vol. 5, pp. 459-468, 1990.
9. Hefner A. R., "An Investigation of the Drive Circuit Requirements for the Power Insulated Gate Bipolar Transistor (IGBT)," IEEE Transactions on Power Electronics, vol. 6, pp. 208-219, 1991.
10. Hefner A. R., "A Dynamic Electro-thermal Model for the IGBT," IEEE Transactions on Industry Applications, vol. 30, pp. 394-405, 1994.
11. Hefner A. R., "Modeling buffer layer IGBTs for circuit simulation," IEEE Transactions on Power Electronics, vol. 10, pp. 111-123, 1995.
12. Hefner A. R. and Dieboh D. M., "An Experimentally Verified IGBT Model Implemented in the Saber Circuit Simulator," in Proc. 1991 IEEE Power Electronics Special Conference, pp. 10-19.
13. Kraus R. and Hoffmann K., "An analytical model of IGBTs with low emitter efficiency," in Proc. 1993 5th International Symposium on Power Semiconductor Devices ICs, Monterey, CA, USA, pp. 30-34.
14. Kraus R., Turkes P., and Sigg J., "Physics Based Models of Power Semiconductor Devices for the Circuit Simulator Spice," in Proc. 1998 29th Annual of IEEE Power Electronics Specialists Conference pp. 1726-1731.
15. K. Sheng, S. J. Finney, and B. W. Williams, "Fast and accurate IGBT model for PSpice," Electronics Letters, vol. 32, pp. 2294-2295, 1996.
16. K. Sheng, S. J. Finney, and B. W. Williams, "A new analytical IGBT model with improved electrical-characteristics," IEEE Transactions on Power Electronics, vol. 14, pp. 98-107, 1999.
17. Kuang Sheng, Barry W. Williams, and Stephen J. Finney, "A Review of IGBT Models," IEEE Transactions on Power Electronics, vol. 15, pp. 1250-1266, 2000.
18. R. Schnell and U. Schlapbach, "Realistic benchmarking of IGBT-modules with the help of a fast and easy to use simulation-tool," in Proc. 2004 Power Electronics Conference, PCIM'04, Nuremberg, Germany, pp. 1-6.
19. F. Semiconductor, "Calculation of Major IGBT Operating Parameter," Infineon, Application Note ANIP9931E, August, 1999. http://www.infineon.com
20. D. Xu, H. Lu, L. Huang, et al., "Power Loss and Junction Temperature Analysis of Power Semiconductor Devices," IEEE Transactions on Industry Applications, vol. 38, pp. 1426-1431, 2002.
21. F. Blaabjerg, U. Jaeger, and S. Munk-Nielsen, "Power losses in PWM-VSI inverter using NPT or PT IGBT devices," IEEE Transactions on Power Electronics, vol. 10, pp. 358-367, 1995.
22. Konrad S., "Ein Beitrag zur Auslegung und Integration spannungsgespeister IGBT-Wechselrichter," Dt Dissertation, TU Ilmenau, Verlag ISLE, Ilmenau, 1997.
23. "Application manual of Fuji IGBT module," Fuji electric, May, 2004
24. Jannie Tsang, "Application Manual of power module," semikron, Nov. 3, 2003
25. Power Transformers Part 1: General, JEC Standard 60076, 60076-1, 2000.
26. Reactors, IEC Standard 60289, 1988.