Analytical modeling of device-circuit interactions for the power insulated gate bipolar transistor (IGBT)

Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)

Volumn 35 n 6, Issue , 1988, Pages 606-614

  Hefner Jr , Allen R ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC CIRCUITS;

INSULATED-GATE TRANSISTORS; POWER TRANSISTORS; PROTECTION CIRCUIT; RESISTOR-INDUCTOR LOAD; SNUBBER;

TRANSISTORS, BIPOLAR;

EID: 0024174975     PISSN: 01972618     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (16)