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Volumn , Issue , 1993, Pages 30-34
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Analytical model of IGBTs with low emitter efficiency
a
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Author keywords
[No Author keywords available]
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Indexed keywords
APPROXIMATION THEORY;
BIPOLAR TRANSISTORS;
CHARGE CARRIERS;
ELECTRIC CURRENT DISTRIBUTION;
ELECTRON TRANSPORT PROPERTIES;
GATES (TRANSISTOR);
MOSFET DEVICES;
SEMICONDUCTOR DEVICE STRUCTURES;
TRANSIENTS;
ANALYTICAL MODEL;
INSULATED GATE BIPOLAR TRANSISTORS;
LOW EMITTER FREQUENCY;
STEADY STATE;
TRANSIENT CHARACTERISTICS;
SEMICONDUCTOR DEVICE MODELS;
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EID: 0027150156
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
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Times cited : (42)
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References (5)
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