An investigation of the drive circuit rerquirements for the power insulated gate bipolar transistor (IGBT)

PESC Record - IEEE Annual Power Electronics Specialists Conference

Volumn , Issue , 1990, Pages 126-137

  Hefner Jr , Allen R ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC NETWORKS - EQUIVALENT CIRCUITS; MATHEMATICAL MODELS; SEMICONDUCTOR DEVICES, MOSFET; SEMICONDUCTOR MATERIALS - CHARGE CARRIERS;

IGBT DRIVE CIRCUIT; IGBT STATE EQUATIONS; INSULATED GATE BIPOLAR TRANSISTOR (IGBT); MOSFET DYNAMIC PARAMETERS;

TRANSISTORS, BIPOLAR;

EID: 0025646928     PISSN: 02759306     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (14)