Continuity and morphology of TaN barriers deposited by atomic layer deposition and comparison with physical vapor deposition

Microelectronic Engineering

Volumn 76, Issue 1-4, 2004, Pages 60-69

  Besling, Wim F A ^a   Ignacimouttou, Marie Laurence ^b   Humbert, Aurelie ^a   Mellier, Maxime ^c   Torres, Joaquin ^b  

^a NXP SEMICONDUCTORS   (Netherlands)

^b STMICROELECTRONICS   (France)

^c PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

Atomic layer deposition; Barrier continuity; HF dip pin hole decoration; Ionized physical vapour deposition; Step coverage

Indexed keywords

ASPECT RATIO; DEPOSITION; DIELECTRIC MATERIALS; IONIZATION; PERMITTIVITY; PHYSICAL VAPOR DEPOSITION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING FILMS;

ATOMIC LAYER DEPOSITION; BARRIER CONTINUITY; IONIZED PHYSICAL VAPOR DEPOSITION; STEP COVERAGE;

TANTALUM COMPOUNDS;

EID: 4544331204     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2004.07.015     Document Type: Conference Paper

References (8)

1. W.F.A. Besling, D. Galpin, M. Mellier, L. Svedberg, T. Mandrekar, F. Wu, S. Guggilla, S. Van, M. Ignacimouttou, J. Torres, in: AMC conference 2003, G.W. Ray, T. Smy, T.Ohta, & M. Tsujimura (Eds.), in: Conference Proceedings AMC XIX, MRS 2004, p. 737.
2. A. Satta, M. Baklanov, O. Richard, A. Vantomme, H. Bender, T. Conard, G. Beyer, K. Maex, W.M. Li, K.E. Elers, S. Haukka, Microelectron. Eng. 60 (2002) 59.
3. A. Satta, S.H. Brongersma, J. Schuhmacher, T. Conard, W. Besling,G. Beyer, K. Maex, A. Vantomme, O. Kilpela, H. Sprey, M.M. Viitanen, H.H. Brongersma, in: Proceedings of the 3rd International Conference on Microelectronics and Interfaces, AVS, 2002, p. 56.
4. W.F.A. Besling, A. Satta, J. Schuhmacher, G. Beyer, K. Maex, O. Kilpela, H. Sprey, in: Proceedings of the 3rd International Conference on Microelectronics and Interfaces, AVS, 2002, p. 52.
5. W. Besling, A. Satta, J. Schuhmacher, T. Abell, V. Sutcliffe, A. Hoyas, G. Beyer, D. Gravesteijn, K. Maex, IITC 2002 Conference June 6-8 2002, IEEE 2002, pp. 288-291.
6. A. Satta, J. Schuhmacher, S. Brongersma, B. Brijs, O. Richard, C. Whelan, K. Maex, A. Vantomme, M.M. Viitanen, H.H. Brongersma, W. Besling, J. Appl. Phys. 92 (2002) 7641.
7. L. Svedberg, C. Prindle, B. Brennan, J.J. Lee, T. Guenther, T. Ryan, K. Junker, N. Grove, J. Jiang, D. Denning, I. Shahvandi, K. Yu, in: AMC Conference, 2002.
8. C. Basceri, M.W. Miller, K. Holtzelaw, J. Smythe, P. Castrovillo, S. Ramarajan, V. Hou, S.W. Russel, G. Sandhu, in: AMC Conference 2003, G.W. Ray, T. Smy, T.Ohta, & M. Tsujimura (Eds.), in: Conference Proceedings AMC XIX, MRS 2004, p. 713.