Anomalous positive-bias temperature instability of high- κ /metal gate devices with Dy2 O3 capping

Applied Physics Letters

Volumn 93, Issue 5, 2008, Pages

  O'Connor, Robert ^a   Chang, Vincent S ^b   Pantisano, Luigi ^a   Ragnarsson, Lars Åke ^a   Aoulaiche, Marc ^a   O'Sullivan, Barry ^a   Groeseneken, Guido ^c  

^a IMEC   (Belgium)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

HAFNIUM COMPOUNDS; METAL RECOVERY; METALS; MODULATION; OZONE WATER TREATMENT; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICES; SULFATE MINERALS; TANTALUM COMPOUNDS; TURBULENT FLOW;

BIAS-TEMPERATURE INSTABILITY; CHARGED SPECIES; ELECTRICAL STRESSING; ELECTRON TRAPPING; HIGH TEMPERATURE; HOT CARRIERS; LOW TEMPERATURE; METAL GATES; METAL-OXIDE SEMICONDUCTORS; MOBILITY DEGRADATION; PHYSICAL MECHANISMS; POSITIVELY CHARGED; TAN METAL GATES; TEMPERATURE DEPENDENCES;

MOSFET DEVICES;

EID: 52049121043     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2967454     Document Type: Article

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