Enhanced thermal dissipation and light output of GaN/sapphire light-emitting diode by direct Cu electroplating

Electrochemical and Solid-State Letters

Volumn 11, Issue 11, 2008, Pages

  Horng, R H ^a   Chiang, C C ^a   Wuu, D S ^a   Hsiao, H Y ^a   Lin, H I ^b  

^a NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

^b Liung Feng Industrial Company Limited   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; COPPER ALLOYS; CORUNDUM; ELECTROCHEMICAL ELECTRODES; ELECTROCHEMISTRY; ELECTROPLATING; GALLIUM NITRIDE; HEATING EQUIPMENT; LIGHT EMISSION; LITHOGRAPHY; METALLIZING; PHOTORESISTS; SEMICONDUCTING GALLIUM; SPREADERS; THERMAL CONDUCTIVITY;

CU ELECTROPLATING; CU SUBSTRATES; GAN/SAPPHIRE; HEAT SPREADERS; LIGHT OUTPUT; LIGHT-EMITTING DIODE; OUTPUT POWERS; POWER CONVERSION EFFICIENCIES; SELF-ALIGNMENT;

LIGHT EMITTING DIODES;

EID: 51849139146     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2972992     Document Type: Article

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