Atomic resolution study of the interfacial bonding at Si3 N4 / CeO2-δ grain boundaries

Applied Physics Letters

Volumn 93, Issue 5, 2008, Pages

  Walkosz, W ^a   Klie, R F ^a   Ogut S ^a   Borisevich, A ^b   Becher, P F ^b   Pennycook, S J ^b   Idrobo, J C ^a,b,c  

^a UNIVERSITY OF ILLINOIS AT CHICAGO   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

^c VANDERBILT UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC SPECTROSCOPY; ATOMS; CERIUM; CERIUM COMPOUNDS; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRONIC STRUCTURE; GRAIN BOUNDARIES; OXYGEN; TRANSMISSION ELECTRON MICROSCOPY;

ATOMIC RESOLUTIONS; CONCENTRATION OF; DIRECT CONTACTS; ELECTRON ENERGY-LOSS SPECTROSCOPIES; INTERFACIAL BONDINGS; INTERGRANULAR FILMS; OXIDATION STATE; RING STRUCTURES; SCANNING TRANSMISSION ELECTRON MICROSCOPES; TWO LAYERS; Z-CONTRAST IMAGING;

CRYSTAL ATOMIC STRUCTURE;

EID: 51849113216     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2968683     Document Type: Article

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13. Removing the oxygen background before normalizing the O signal does not change the conclusions. The O FWHM is 0.46 nm broader than that of the Ce signal. The onset of the O signal occurs 0.1 nm before the Ce signal.
14. W. Walkosz, J. C. Idrobo, R. F. Klie, and S. Öǧüt (unpublished).
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