Progressive breakdown dynamics in HfSiON/SiON gate stacks

"2008 26th International Conference on Microelectronics, Proceedings, MIEL 2008"

Volumn , Issue , 2008, Pages 525-528

  Miranda, E ^a   Falbo, P ^b   Nafria M ^a   Crupi, F ^b  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b UNIVERSITY OF CALABRIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TUNNELING; HAFNIUM COMPOUNDS; MICROELECTRONICS;

BREAKDOWN SPOTS; EFFECTIVE CROSS SECTIONS; ELECTRON CHARGE; GATE TUNNELING CURRENTS; NANOCONSTRICTIONS; PLANCK'S CONSTANTS; POST-BREAKDOWN CONDUCTANCE; PROGRESSIVE BREAKDOWN;

LOGIC GATES;

EID: 51749100436     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICMEL.2008.4559338     Document Type: Conference Paper

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