Gate leakage analysis of nano-MOSFETs using ensemble full band Monte Carlo with quantum correction

2007 International Symposium on Integrated Circuits, ISIC

Volumn , Issue , 2007, Pages 135-138

  Kajen, R S ^b   Chang, Ken K F ^b   Bai, Ping ^a   Li, Erping ^a  

^a IEEE

^b NONE

Author keywords

Direct tunneling; Dual thickness gate oxide; Full Band Monte Carlo; Gate leakage current; MOSFET

Indexed keywords

CHARGE COUPLED DEVICES; ELECTRON BEAM LITHOGRAPHY; FIELD EFFECT SEMICONDUCTOR DEVICES; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; INTEGRATED CIRCUITS; METALLIC COMPOUNDS; MONTE CARLO METHODS; MOS CAPACITORS; MOS DEVICES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; TRANSISTORS; TUNNELING (EXCAVATION);

DIRECT TUNNELING; DUAL-THICKNESS GATE OXIDE; FULL BAND MONTE CARLO; GATE LEAKAGE CURRENT; MOSFET;

MOSFET DEVICES;

EID: 51549099006     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISICIR.2007.4441815     Document Type: Conference Paper

References (8)

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