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Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2008, Pages 119-122

An 80V class silicon lateral trench power MOSFET for high frequency switching applications

(5) Varadarajan, K R a Chow, T P a Liu, R b Gonzalez, F b Choy, B b

a RENSSELAER POLYTECHNIC INSTITUTE (United States)

b Supertex (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; MOSFET DEVICES; POWER ELECTRONICS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR SWITCHES; SILICON;

INTERNATIONAL SYMPOSIUM; POWER SEMICONDUCTOR DEVICES; TRENCH POWER MOSFET;

SEMICONDUCTOR DEVICES;

EID: 51549089020 PISSN: 10636854 EISSN: None Source Type: Conference Proceeding
DOI: 10.1109/ISPSD.2008.4538912 Document Type: Conference Paper

Times cited : (3)

References (7)

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4
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7
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.