Lateral power MOSFET for megahertz-frequency, high-density DC/DC converters

IEEE Transactions on Power Electronics

Volumn 21, Issue 1, 2006, Pages 11-16

  Shen, Z John ^a,d   Okada, David N ^b   Lin, Fuyu ^b   Anderson, Samuel ^b   Cheng, Xu ^c,d  

^a University of Central Florida   (United States)

^b Great Wall Semiconductor   (United States)

^c BEIJING UNIVERSITY OF TECHNOLOGY   (China)

^d IEEE   (United States)

Author keywords

DC DC converter; Power metal oxide semiconductor field effect transistors (MOSFETs); Synchronous rectifier

Indexed keywords

ALTERNATIVE DEVICES; GATE CHARGE; SYNCHRONOUS RECTIFIERS;

DC-DC CONVERTERS; ELECTRIC POTENTIAL; ELECTRIC RECTIFIERS; PULSE WIDTH MODULATION; SWITCHING FREQUENCY; SYNCHRONOUS MACHINERY;

MOSFET DEVICES;

EID: 33947159688     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2005.861111     Document Type: Article

References (18)

1. E. Stanford, "New processors will require new powering technologies," Power Electron. Technol., vol. 28, no. 2, pp. 32-42, Feb. 2002.
2. G. Moxey, "TrenchFETs enhance DC-DC converter performance," Power Electron. Technol., vol. 29, no. 2, pp. 36-38, Feb. 2003.
3. G. Stojcic et al., "MOSFET synchronous rectifiers for isolated, board-mounted DC-DC converters," in Proc. INTELEC'00, Sep. 2000, pp. 258-266.
4. R. Sodhi et al., "Integrated design environment for DC/DC converter FET optimization," in Proc. ISPSD'99, May 1999, pp. 241-244.
5. M. Darwish et al., "A new power W-gated trench MOSFET (WMOSFET) with high switching performance," in Proc. ISPSD'03, Apr. 2003, pp. 24-27.
6. R. Hueting et al., "Switching performance of low-voltage N-chanell trench MOSFETs," in Proc. 14th Int. Symp. Power Semiconductor Devices ICs (ISPSD'02), Jun. 2002, pp. 177-200.
7. T. McDonald et al., "Evaluation of power MOSFET thermal solutions for desktop and mobile processor power," in Proc. PCIM China, Mar. 2002, pp. 145-151.
8. D. Maric and R. Monteiro, "20 V MOSFETs for DC-DC converters in desktop computer and servers," IR Appl. Notes, pp. 1-6, 2002.
9. T. Efland, "Power BiCMOS process with high voltage device implementation for 20 V mixed signal circuit applications," Microelectron. J., vol. 32, pp. 409-418, 2001.
10. A. Huang et al., "Low voltage power devices for future VRM," in Proc. ISPSD'98, Jun. 1998, pp. 395-398.
11. 2, 6-m power MOSFET to power future microprocessor," in Proc. ISPSD'99, May 1999, pp. 77-80.
12. K. Sakamoto et al., "Low on resistance and low feedback-charge, lateral power MOSFETs with multi-drain regions for high-efficiency dc/dc converters," in Proc. ISPSD'02, Jun. 2002, pp. 25-28.
13. N. Yasuhara et al., "Low gate charge 30 V N-channel LDMOS for DC-DC converters," in Proc. ISPSD'03, Apr. 2003, pp. 186-189.
14. M. Darwish et al., "The scaling issue of lateral power MOSFETs," in Proc. ISPSD'98, 1998, pp. 329-337.
15. Z. Shen, "Power MOSFET," U.S. Patent Application 20050017299, Jun. 2003.
16. Siliconix, Si4838DY Data Sheet, Apr. 2003.
17. R. Williams, "Beyond Y2K: technology convergence as a driver of future low-voltage power management semiconductors," in Proc. ISPSD'02, May 2002, pp. 9-14.
18. Vicor Corporation. (2005) Factorized Power Architecture. Tech. Rep. [Online] Available: http://www.vicr.com/products/vichip/fpa/